the op800 series device consist of a npn silicon phototransistor mounted in a hermetcally sealed package. the narrow receiving angle provides excellent on - axis coupling. to - 18 package ofer high power dissipaton and hostle environment operaton. the base lead is bonded to enable conventonal transistor biasing. ? industrial and commercial electronics ? distance sensing ? harsh environment ? photointerrupters ? narrow receiving angle ? suitable for applicatons from 400nm to 1100 ? variety of sensitvity ranges ? to - 18 hermetcally sealed package ? enhanced temperature range ? base lead connecton rohs
collector - base voltage 30 v collector - emiter voltage 30 v emiter - base voltage 5 v emiter - collector voltage 5 v contnuous collector current 50 ma storage temperature range - 65 o c to +150 o c operatng temperature range - 65 o c to +125 o c lead soldering temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260 c (2) power dissipaton 250 mw (3) notes: 1. rma fux is recommended. duraton can be extended to 10 seconds maximum when fow soldering. 2. derate linearly 2.5 mw/ c above 25 c. 3. juncton temperature maintained at 25 c. 4. light source is a gaaias led, 890 nm peak emission wavelength, providing a 0.5 mw/cm 2 radiant intensity on the unit under test. the intensity level is not necessarily uniform over the lens area of the unit under test.
i c(on) (3) on - state collector current op800d op800c op800b OP800A 0.45 0.90 1.80 3.60 - - - - - 3.60 5.40 - ma ma ma ma v ce = 5 v, e e = 0.5 mw/cm 2(4 ) i ceo collector dark current - - 100 na v ce = 10 v, e e = 0 v (br)ceo collector - emiter breakdown voltage 30 - - v i c = 100 a v (br)cbo collector - base breakdown voltage 30 - - v i c = 100 a v (br)eco emiter - collector breakdown voltage 5.0 - - v i e = 100 a v (br)ebo emiter - base breakdown voltage 5.0 - - v i e = 100 a t r rise time - 7.0 - s v cc = 5 v, i c = 0.80 ma, r l = 100 ? (see test circuit) t f fall time - 7.0 - s
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